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NDF06N62Z
N-Channel Power MOSFET
620 V, 1.2 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating Symbol NDF06N62Z Unit
V DSS
620 V
http://onsemi.com
R DS(ON) (MAX) @ 3 A
1.2 W
N ? Channel
D (2)
Drain ? to ? Source Voltage
Continuous Drain Current R q JC (Note 1)
V DSS
I D
620
6.0
V
A
Continuous Drain Current
R q JC , T A = 100 ° C (Note 1)
Pulsed Drain Current,
V GS @ 10 V
Power Dissipation R q JC
Gate ? to ? Source Voltage
I D
I DM
P D
V GS
3.8
20
31
± 30
A
A
W
V
TO ? 220FP
G (1)
S (3)
Single Pulse Avalanche Energy, I D = 6.0
A
ESD (HBM)
(JESD 22 ? A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 14)
Peak Diode Recovery (Note 2)
Continuous Source Current (Body Diode)
Maximum Temperature for
Soldering Leads
E AS
V esd
V ISO
dv/dt
I S
T L
113
3000
4500
4.5
6.0
260
mJ
V
V
V/ns
A
° C
CASE 221D
STYLE 1
MARKING
DIAGRAM
NDF06N62ZG
AYWW
Operating Junction and
Storage Temperature Range
T J , T stg
? 55 to 150
° C
Gate
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I SD = 6.0 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
A
Y
WW
G
Drain
= Location Code
= Year
= Work Week
= Pb ? Free, Halogen ? Free Package
ORDERING INFORMATION
Device
NDF06N62ZG
Package
TO ? 220FP
(Pb ? Free,
Halogen ? Free)
Shipping
50 Units / Rail
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 1
1
Publication Order Number:
NDF06N62Z/D
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